BF961 document number 85002 rev. 1.5, 25-nov-04 vishay semiconductors www.vishay.com 1 13625 1 4 3 2 g 2 g 1 d s electrostatic sensitive device. observe precautions for handling. n-channel dual gate mos-fieldeffect tetrode, depletion mode features ? integrated gate protection diodes high cross modulation performance low noise figure high agc-range low feedback capacitance low input capacitance applications input- and mixer stages especially for fm- and vhf tv-tuners up to 300 mhz. mechanical data case: to-50 plastic case weight: approx. 124 mg marking: BF961 pinning: 1 = drain, 2 = source, 3 = gate 1, 4 = gate 2 parts table absolute maximum ratings t amb = 25 c, unless otherwise specified maximum thermal resistance 1) on glass fibre printed board (40 x 25 x 1.5) mm 3 plated with 35 m cu part ordering ccode marking package BF961 BF961a or BF961b BF961 to50 BF961a BF961a BF961 to50 BF961b BF961b BF961 to50 parameter test condition symbol value unit drain - source voltage v ds 20 v drain current i d 30 ma gate 1/gate 2 - source peak current i g1/g2sm 10 ma total power dissipation t amb 60 c p tot 200 mw channel temperature t ch 150 c storage temperature range t stg - 55 to + 150 c parameter test condition symbol value unit channel ambient 1) r thcha 450 k/w
www.vishay.com 2 document number 85002 rev. 1.5, 25-nov-04 vishay BF961 vishay semiconductors electrical dc characteristics t amb = 25 c, unless otherwise specified electrical ac characteristics t amb = 25 c, unless otherwise specified v ds = 15 v, i d = 10 ma, v g2s = 4 v, f = 1 mhz typical characteri stics (tamb = 25 c unless otherwise specified) parameter test condition part symbol min ty p. max unit drain - source breakdown voltage i d = 10 a, - v g1s = - v g2s = 4 v v (br)ds 20 v gate 1 - source breakdown voltage i g1s = 10 ma, v g2s = v ds = 0 v (br)g1ss 814v gate 2 - source breakdown voltage i g2s = 10 ma, v g1s = v ds = 0 v (br)g2ss 814v gate 1 - source leakage current v g1s = 5 v, v g2s = v ds = 0 i g1ss 100 na gate 2 - source leakage current v g2s = 5 v, v g1s = v ds = 0 i g2ss 100 na drain current v ds = 15 v, v g1s = 0, v g2s = 4 v BF961 i dss 420ma BF961a i dss 4 10.5 ma BF961b i dss 9.5 20 ma gate 1 - source cut-off voltage v ds = 15 v, v g2s = 4 v, i d = 20 a - v g1s(off) 3.5 v gate 2 - source cut-off voltage v ds = 15 v, v g1s = 0, i d = 20 a- v g2s(off) 3.5 v parameter test condition symbol min ty p. max unit forward transadmittance | y 21s |12 15 ms gate 1 input capacitance c issg1 3.7 pf gate 2 input capacitance v g1s = 0, v g2s = 4 v c issg2 1.6 pf feedback capacitance c rss 25 ff output capacitance c oss 1.6 pf power gain g s = 2 ms, g l = 0.5 ms, f = 200 mhz g ps 20 db agc range v g2s = 4 to - 2 v, f = 200 mhz ? g ps 50 db noise figure g s = 2 ms, g l = 0.5 ms, f = 200 mhz f1.82.5db figure 1. total power dissipati on vs. ambient temperature 0 50 100 150 200 250 300 0 20 40 60 80 100 120 140 160 96 12159 p - total power dissipation ( mw ) tot t amb - ambient temperature ( c) iure 2draincurrentsdrainoureoltae 0 2 4 6 8 10 12 14 16 18 20 22 024681012141618202224 v ds C drain source voltag e(v) 96 12160 i C drain current ( ma) d v g1s = 0.6 v 0.4 v 0.2 v 0 C0.2 v C0.4 v C0.6 v C0.8 v
vishay BF961 document number 85002 rev. 1.5, 25-nov-04 vishay semiconductors www.vishay.com 3 figure 3. forward transadmittance vs. gate 2 source voltage figure 4. forward transadmittance vs. gate 1 source voltage figure 5. gate 1 input capacitance vs. gate 1 source voltage 0 2 4 6 8 10 12 14 16 18 20 22 24 C2C10123456 v g2s C gate 2 source voltag e(v) 96 12161 y C forwardtransadmittance ( ms ) 21s v ds =15v i ds =10ma v g1s = 0.5 v 0v C0.5 v 0 2 4 6 8 10 12 14 16 18 20 22 -2 -1.5 -1 -0.5 0 0.5 1 1.5 2 2.5 3 3.5 v g1s - gate 1 source voltage ( v ) 96 12162 y C forwardtransadmittance ( ms ) 21s v ds =15v f=1mhz v g2s =5v 4v 3v 2v 1v 0v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 C2.0C1.5C1.0C0.5 0.0 0.5 1.0 1.5 2.0 2.5 3.0 v g1s C gate 1 source voltag e(v) 96 12163 c C gate 1 input capacitance ( pf ) issg1 v ds =15v v g2s =4v f=1mhz figure 6. gate 2 input capacitance vs. gate 2 source voltage figure 7. output capacitance vs. drain source voltage figure 8. short circuit input admittance 0.0 0.4 0.8 1.2 1.6 2.0 2.4 2.8 3.2 3.6 4.0 C2C101234567 v g2s C gate 2 source voltag e(v) 96 12164 c C gate 2 input capacitance ( pf ) issg2 v ds =15v v g1s =0 f=1mhz 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0246810121416182022 v ds - drain source v oltage ( v ) 96 12165 c C output capacitance ( pf ) oss v g2s =4v f=1mhz 0 2 4 6 8 10 12 14 16 18 012345678910 re (y 11 )(ms) 96 12166 im(y ) (ms) 11 v ds =15v v g2s =4v i d = 5...20 ma f = 50...700 mhz f =700 mhz 600 mhz 500 mhz 400 mhz 300 mhz 200 mhz 100 mhz
www.vishay.com 4 document number 85002 rev. 1.5, 25-nov-04 vishay BF961 vishay semiconductors figure 9. short circuit fo rward transfer admittance figure 10. short circuit output admittance C30 C25 C20 C15 C10 C5 0 5 10 0 2 4 6 8 10121416182022242628 re (y 21 )(ms) 96 12167 im(y ) (ms) 21 v ds =15v v g2s =4v f = 50...700 mhz f=50mhz 600 mhz 500 mhz 400 mhz 300 mhz 200 mhz 100 mhz 700 mhz i d =5ma 10 ma 20 ma 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5 7.0 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 re (y 22 )(ms) 96 12168 im(y ) (ms) 22 v ds =15v v g2s =4v i d = 5...20 ma f = 50...700 mhz f = 700 mhz 600 mhz 500 mhz 400 mhz 300 mhz 200 mhz 100 mhz i d =5ma i d =20ma
vishay BF961 document number 85002 rev. 1.5, 25-nov-04 vishay semiconductors www.vishay.com 5 v ds = 15 v, i d = 5 to 20 ma, v g2s = 4 v, z 0 = 50 ? s 11 s 21 s 12 s 22 figure 11. input reflection coefficient figure 12. forward tr ansmission coefficient Cj0.2 Cj0.5 Cj Cj2 Cj5 0 j0.2 j0.5 j j2 j5 0.2 0.5 1 2 5 700 mhz 100 50 300 500 12920 0 90 180 C90 0.8 1.6 C150 C120 C60 120 60 30 12922 700mhz 200 400 50 C30 i = 20 ma d i = 10 ma d i =5ma d figure 13. reverse transmission coefficient figure 14. output reflection coefficient 700 mhz 12921 0 90 180 C90 0.04 0.08 C150 C120 C60 C30 120 150 60 30 600 300 12923 Cj0.2 Cj0.5 Cj Cj2 Cj5 0 j0.2 j0.5 j j2 j5 ? 0.2 0.5 1 2 5 700 mhz 100 300 500
www.vishay.com 6 document number 85002 rev. 1.5, 25-nov-04 vishay BF961 vishay semiconductors package dimensions in mm 96 12242
vishay BF961 document number 85002 rev. 1.5, 25-nov-04 vishay semiconductors www.vishay.com 7 ozone depleting subst ances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performanc e of our products, processes, distribution and operatingsystems with respect to their impact on the hea lth and safety of our empl oyees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the cl ean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semi conductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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